GaN is regarded as the third generation of semiconductor materials after the first generation of Ge and Si semiconductor materials and the second generation of GaAs and InP compound semiconductor materials. It has a broad prospect in the application of optoelectronics, high-temperature high-power devices and high-frequency microwave devices.With the progress of technology and people’s needs, gallium nitride products have come into our lives, in the charger application is gradually layout, common in USB PD quick charge and other advanced products.

GaN has high thermal conductivity, low heat generation rate and other characteristics, which can reduce the size of internal components of the charger, so as to achieve ultra-compact internal structure and more efficient charging.

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